DocumentCode :
1736097
Title :
5-GHz Band Highly Linear VCO IC with a Novel Resonant Circuit
Author :
Kurachi, Satoshi ; Yoshimasu, Toshihiko ; Itoh, Nobuyuki ; Yonemura, Koji
Author_Institution :
Graduate Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu
fYear :
2007
Firstpage :
285
Lastpage :
288
Abstract :
This paper presents a 0.35-mum SiGe BiCMOS VCO IC exhibiting a linear VCO gain (Kvco) for 5-GHz band application. To realize a linear Kvco, a novel resonant circuit is proposed. The measured Kvco changes from 224 MHz/V to 341 MHz/V. The ratio of the maximum Kvco to the minimum one is 1.5 which is less than one-half of that of a conventional VCO. The VCO oscillation frequency range is from 5.45 GHz to 5.95 GHz, the tuning range is 8.8 %, and the dc current consumption is 3.4 mA at a supply voltage of 3.0 V. The measured phase noise is -116 dBc/Hz at 1MHz offset, which is similar to the conventional VCO
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; phase noise; voltage-controlled oscillators; 0.35 micron; 1 MHz; 3.0 V; 3.4 mA; 5 GHz; Kvco; SiGe; VCO IC; linear VCO gain; resonant circuit; voltage controlled oscillator; Application specific integrated circuits; BiCMOS integrated circuits; Frequency; Gain; Germanium silicon alloys; RLC circuits; Silicon germanium; Tuning; Voltage; Voltage-controlled oscillators; Kvco; linear VCO gain; resonant circuit; voltage-controlled oscillator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
Type :
conf
DOI :
10.1109/SMIC.2007.322814
Filename :
4117381
Link To Document :
بازگشت