DocumentCode
1736097
Title
5-GHz Band Highly Linear VCO IC with a Novel Resonant Circuit
Author
Kurachi, Satoshi ; Yoshimasu, Toshihiko ; Itoh, Nobuyuki ; Yonemura, Koji
Author_Institution
Graduate Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu
fYear
2007
Firstpage
285
Lastpage
288
Abstract
This paper presents a 0.35-mum SiGe BiCMOS VCO IC exhibiting a linear VCO gain (Kvco) for 5-GHz band application. To realize a linear Kvco, a novel resonant circuit is proposed. The measured Kvco changes from 224 MHz/V to 341 MHz/V. The ratio of the maximum Kvco to the minimum one is 1.5 which is less than one-half of that of a conventional VCO. The VCO oscillation frequency range is from 5.45 GHz to 5.95 GHz, the tuning range is 8.8 %, and the dc current consumption is 3.4 mA at a supply voltage of 3.0 V. The measured phase noise is -116 dBc/Hz at 1MHz offset, which is similar to the conventional VCO
Keywords
BiCMOS integrated circuits; Ge-Si alloys; phase noise; voltage-controlled oscillators; 0.35 micron; 1 MHz; 3.0 V; 3.4 mA; 5 GHz; Kvco; SiGe; VCO IC; linear VCO gain; resonant circuit; voltage controlled oscillator; Application specific integrated circuits; BiCMOS integrated circuits; Frequency; Gain; Germanium silicon alloys; RLC circuits; Silicon germanium; Tuning; Voltage; Voltage-controlled oscillators; Kvco; linear VCO gain; resonant circuit; voltage-controlled oscillator;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location
Long Beach, CA
Print_ISBN
0-7803-9765-7
Electronic_ISBN
0-7803-9765-7
Type
conf
DOI
10.1109/SMIC.2007.322814
Filename
4117381
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