• DocumentCode
    1736114
  • Title

    (Ultra)thin oxide breakdown(s), an overview

  • Author

    Vincent, Emmnnuel

  • Author_Institution
    Central R&D Labs., STMicroelectronics, Crolles, France
  • fYear
    1999
  • fDate
    6/21/1905 12:00:00 AM
  • Firstpage
    158
  • Lastpage
    166
  • Abstract
    This paper briefly reviews the main degradation mechanisms which occur in thin oxides during Fowler-Nordheim electron injection in order to better highlight the evolutions of the oxide failure modes when scaling down the oxide thickness. In particular, the impact of the oxide thickness scaling down on the breakdown phenomena is analyzed. Moreover, the quasi-breakdown phenomenon, a new failure mode observed in ultrathin oxides, is described and a methodology to rigorously address the ultrathin oxide reliability is given
  • Keywords
    electric breakdown; insulating thin films; semiconductor device reliability; Fowler-Nordheim electron injection; degradation mechanisms; oxide failure modes; oxide thickness; quasi-breakdown phenomenon; thin oxides; ultrathin oxide reliability; Capacitance; Carbon capture and storage; Cathode ray tubes; Dielectrics; Electrons; Large Hadron Collider; Stress; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 1999. IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-5649-7
  • Type

    conf

  • DOI
    10.1109/IRWS.1999.830587
  • Filename
    830587