DocumentCode
1736114
Title
(Ultra)thin oxide breakdown(s), an overview
Author
Vincent, Emmnnuel
Author_Institution
Central R&D Labs., STMicroelectronics, Crolles, France
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
158
Lastpage
166
Abstract
This paper briefly reviews the main degradation mechanisms which occur in thin oxides during Fowler-Nordheim electron injection in order to better highlight the evolutions of the oxide failure modes when scaling down the oxide thickness. In particular, the impact of the oxide thickness scaling down on the breakdown phenomena is analyzed. Moreover, the quasi-breakdown phenomenon, a new failure mode observed in ultrathin oxides, is described and a methodology to rigorously address the ultrathin oxide reliability is given
Keywords
electric breakdown; insulating thin films; semiconductor device reliability; Fowler-Nordheim electron injection; degradation mechanisms; oxide failure modes; oxide thickness; quasi-breakdown phenomenon; thin oxides; ultrathin oxide reliability; Capacitance; Carbon capture and storage; Cathode ray tubes; Dielectrics; Electrons; Large Hadron Collider; Stress; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-5649-7
Type
conf
DOI
10.1109/IRWS.1999.830587
Filename
830587
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