Title :
Flexibly controllable Sub-Second Flash Lamp Annealing
Author :
Kiyama, Hiroki ; Kusuda, Tatsufumi ; Kato, Shinichi ; Aoyama, Takayuki
Author_Institution :
Semicond. Equip. Co., DAINIPPON SCREEN Manuf. co., Ltd., Shiga
Abstract :
We have developed sub-second annealing technology (SSA) to complement milli-second annealing (MSA: 1-10 ms) and spike-RTA (sRTA: 1000 ms) annealing time. By using unique IGBT circuit, we have succeeded to create 40 ms flash lamp annealing (FLA) with milli-second soak profile. Simulation shows that heat profile is also controllable like RTA. We used this SSA technology to anneal Blanket wafer and have found that SSA can activate dopant and improve EOR defect recovery without dopant diffusion.
Keywords :
incoherent light annealing; insulated gate bipolar transistors; Blanket wafer; EOR defect recovery; IGBT circuit; dopant diffusion; flexibly controllable sub-second flash lamp annealing; insulated gate bipolar transistor; milli-second annealing; milli-second soak profile; spike-RTA; time 1 ms to 10 ms; time 1000 ms; time 40 ms; Annealing; Capacitors; Circuit simulation; Insulated gate bipolar transistors; Lamps; Pulse circuits; Pulse shaping methods; Switches; Timing; Voltage;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
Electronic_ISBN :
978-1-4244-1738-4
DOI :
10.1109/IWJT.2008.4540052
