Title :
The CDFII silicon detector
Author_Institution :
Fermi Nat. Accelerator Lab., Batavia, IL, USA
Abstract :
The CDFII silicon detector consists of 8 layers of double-sided silicon micro-strip sensors totalling 722,432 readout channels, making it one of the largest silicon detectors in present use by an HEP experiment. After two years of data taking, we report on our experience operating the complex device. The performance of the CDFII silicon detector is presented and its impact on physics analyses is discussed. We have already observed measurable effects from radiation damage. These results and their impact on the expected lifetime of the detector are briefly reviewed.
Keywords :
silicon radiation detectors; CDFII silicon detector; HEP experiment; SVXII ISL; complex device; double-sided silicon micro-strip sensors; measurable effects; physics analyses; radiation damage; readout channels; silicon paper number IM04-4544; Capacitors; Collaboration; Detectors; Gears; Large-scale systems; Maintenance; Optical noise; Physics; Silicon; Wire;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE
Print_ISBN :
0-7803-8248-X
DOI :
10.1109/IMTC.2004.1351163
