Title :
A resistorless low current reference circuit for implantable devices
Author :
Georgiou, J. ; Toumazou, C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this paper a basic, four-transistor, resistorless current reference circuit is described, aimed at implantable biomedical applications. The circuit takes advantage of two different thickness thermally grown gate oxides, which are available in most high voltage processes and in some of the latest sub-micron feature size processes. Current tuning is achieved by sizing the transistors accordingly.
Keywords :
VLSI; biomedical electronics; circuit tuning; prosthetics; reference circuits; biomedical applications; current tuning; high voltage processes; implantable devices; resistorless low current reference circuit; sub-micron feature size processes; thermally grown gate oxides; Biomedical engineering; Circuit optimization; Educational institutions; Energy consumption; Equations; MOSFET circuits; Muscles; Resistors; Temperature dependence; Voltage;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010193
