Double-sided cooling for high power IGBT modules using flip chip technology

Author

Gillot, C. ; Schaeffer, C. ; Ferret, R. ; Massit, C. ; Meysene

Author_Institution

CNRS, Univ. Joseph Fourier, Grenoble, France

Volume

5

fYear

2000

fDate

2000

Firstpage

3016

Abstract

A new technique for the packaging of IGBT modules has been developed. The components are sandwiched between two DBC (direct bond copper) substrates with aluminum nitride. Wire bonds are replaced with flip chip solder bumps, which allows to cool components on both sides. Microchannel heat sinks are directly integrated in the package to decrease the thermal resistance of the module. Thus, a very compact module with high thermal performance is obtained. A prototype with two IGBTs (insulated gate bipolar transistor) and four diodes associated in parallel was realised and tested. In this paper, the innovative packaging technique is described, and results of thermal tests are presented

Keywords

cooling; flip-chip devices; heat sinks; insulated gate bipolar transistors; modules; power bipolar transistors; semiconductor device packaging; soldering; substrates; thermal resistance; Wire bonds; diodes; direct bond copper substrates; double-sided cooling; flip chip solder bumps; flip chip technology; high power IGBT modules; insulated gate bipolar transistor; microchannel heat sinks; packaging; packaging technique; thermal performance; thermal resistance; thermal tests; Aluminum nitride; Bonding; Cooling; Copper; Flip chip; Insulated gate bipolar transistors; Packaging; Testing; Thermal resistance; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2000. Conference Record of the 2000 IEEE

Conference_Location

Rome

ISSN

0197-2618

Print_ISBN

0-7803-6401-5

Type

conf

DOI

10.1109/IAS.2000.882595

Filename

882595