Magnetoresistive random access memories: integration issues for novel magnetic devices into memory cells

We describe a DRAM-like approach towards a nonvolatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. For a good performance in terms of speed and signal, the magnetic storage element itself must be considered in a semiconductor environment which defines the substrate to be used, as well as the read-out electronics for addressing the information. A global assessment for the integration of MRAM cells is addressed.