The effect of different transport models in simulations of a 4H SiC ultra short channel MOSFET

Author

Dubaric, E. ; Hjelm, M. ; Nilsson, H.-E. ; Petersson, C.S. ; Käckel, P.

Author_Institution

Dept. of Inf. Technol., Mid-Sweden Univ., Sundsvall, Sweden

fYear

1999

fDate

22-24 Nov. 1999

Firstpage

247

Lastpage

250

Abstract

A study of a 4H-SiC ultra short channel MOSFET using state of the art drift-diffusion (DD) and hydrodynamic transport (HD) simulation models is presented. The results have been compared with simulations using a full band Monte Carlo (MC) model. The MC model used is based on data from a full potential band structure calculation using the local density approximation (LDA) to the density functional theory (DFT).

Keywords

MOSFET; Monte Carlo methods; density functional theory; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC ultra short channel MOSFET; DD simulation model; DFT; HD simulation model; LDA; MC model; SiC; density functional theory; drift-diffusion simulation model; full band Monte Carlo model; full potential band structure calculation; hydrodynamic transport simulation model; local density approximation; simulations; transport models; Acoustic scattering; Anisotropic magnetoresistance; Brillouin scattering; MOSFET circuits; Medical simulation; Monte Carlo methods; Optical saturation; Optical scattering; Phonons; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1999. ICM '99. The Eleventh International Conference on

Print_ISBN

0-7803-6643-3

Type

conf

DOI

10.1109/ICM.2000.884850

Filename

884850