An electrostatically doped planar device concept

Author

Krauss, T. ; Wessely, Frank ; Schwalke, Udo

Author_Institution

Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2014

fDate

6-8 May 2014

Firstpage

1

Lastpage

4

Abstract

In this paper, we propose and demonstrate by simulation an electrostatically doped and therefore voltage-programmable planar field-effect-transistor (FET) structure which is based on our results of already published Si-nanowire (SiNW) devices. The key technology for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) platform. The desired transistor type, i.e. NFET or PFET, is selectable on the fly by applying an appropriate control-voltage which significantly enhances flexibility in design of integrated circuits.

Keywords

Schottky gate field effect transistors; electrostatic devices; semiconductor junctions; silicon-on-insulator; FET structure; NFET; PFET; SOI platform; Schottky S-D junctions; SiNW devices; control-voltage; dual-gated general purpose FET; electrostatically doped planar device concept; integrated circuit design; silicon-nanowire devices; silicon-on-insulator platform; voltage-programmable planar field-effect-transistor; Field effect transistors; Leakage currents; Nanoscale devices; Silicon; Silicon-on-insulator; Threshold voltage; SOI; ambipolar; electrostatic doping; reconfigurable; voltage-programmable;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2014 9th IEEE International Conference On

Conference_Location

Santorini

Type

conf

DOI

10.1109/DTIS.2014.6850650

Filename

6850650