The inner phenomena of hard driven GTO using 2-dimensional FEM simulation

Author

Sakata, Hiroshi ; Kamioka, Hidekazu ; Isomura, Satoru

Author_Institution

Dept. of Electr. & Electron. Eng., Ehime Univ., Matsuyama, Japan

Volume

1

fYear

2000

fDate

2000

Firstpage

385

Abstract

The merits of device simulation are not only to predict switching characteristics but also to observe inner phenomena of device such as GTOs. In this paper, the authors analyzed the switching characteristics of hard griven GTOs (HD-GTOs) using a 2-dimensional finite element method (FEM). HD-GTOs operate at a large gate current and commutate current quickly from main circuit to gate circuit, and can reduce both turn-off time and loss. The authors simulate the turn-off characteristics of HD-GTOs and GTOs, and make discussions on the inner phenomena of these devices

Keywords

finite element analysis; power semiconductor switches; semiconductor device models; switching; thyristors; device simulation; fast current commutation; gate current; hard driven GTO; inner phenomena; switching characteristics; turn-off characteristics; using 2-dimensional FEM simulation; Charge carrier processes; Circuit simulation; Current density; Electron mobility; Finite element methods; Nonlinear equations; Poisson equations; Predictive models; Tail; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International

Conference_Location

Beijing

Print_ISBN

7-80003-464-X

Type

conf

DOI

10.1109/IPEMC.2000.885434

Filename

885434