Title :
New IEGT device for a klystron anode modulator switch
Author :
Fujiwara, Takashi ; Okamura, Katsuya ; Sakai, Takami ; Nishine, Kazumi
Author_Institution :
Toshiba Corp., Tokyo, Japan
Abstract :
To replace vacuum tubes in klystron anode modulators with a semiconductor switch, we have developed a one chip IEGT (injection enhanced gate transistor) module. IEGT is a new semiconductor device which was originally invented by Toshiba. Based on the electron injection enhancement effects, IEGT has excellent characteristics, high blocking voltage capability of 4.5 kV and fast switching performance. This IEGT module is one of the most likely candidates for the semiconductor switch. For the next step, we are planning to start to develop a 100 kV IEGT switch for a klystron anode modulator
Keywords :
anodes; klystrons; modulators; power MOSFET; power semiconductor switches; 100 kV; Toshiba; electron injection enhancement effects; fast switching performance; high blocking voltage capability; injection enhanced gate transistor; klystron anode modulator switch; Anodes; Electron tubes; FETs; Insulated gate bipolar transistors; Klystrons; Power semiconductor switches; Pulse transformers; Pulse width modulation; Space vector pulse width modulation; Voltage;
Conference_Titel :
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location :
Beijing
Print_ISBN :
7-80003-464-X
DOI :
10.1109/IPEMC.2000.885435
