Title :
Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications
Author :
Nallet, F. ; Sénés, A. ; Planson, D. ; Locatelli, M.L. ; Chante, J.P. ; Taboy, J.P.
Author_Institution :
Centre de Genie Electr., Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
The subject of this paper is a study of the ability of silicon carbide to be used for new solid state power device applications. A 4H-SiC current limiting device is studied. The device structure is a vertical power MOSFET with a preformed N channel. Its electrothermal behavior is presented through simulations with ISE TCAD tools. The efficiency of such a silicon device is estimated for comparison with SiC. A full simulation with two SiC devices inside an HSPICE modeled circuit is also proposed to study the ability of a bi-directional serial protection system
Keywords :
current limiters; power MOSFET; protection; semiconductor device models; semiconductor materials; silicon compounds; technology CAD (electronics); 4H-SiC high voltage current limiting device; HSPICE modeled circuit; ISE TCAD tools; SiC; bi-directional serial protection system; efficiency estimation; electrical 2D simulations; electrothermal 2D simulations; preformed N channel; serial protection applications; solid state power device applications; vertical power MOSFET; Bidirectional control; Circuit simulation; Current limiters; Electrothermal effects; MOSFET circuits; Power MOSFET; Power system modeling; Silicon carbide; Silicon devices; Solid state circuits;
Conference_Titel :
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location :
Beijing
Print_ISBN :
7-80003-464-X
DOI :
10.1109/IPEMC.2000.885436
