Title :
An experimental and numerical investigation of IGBT blocking characteristics
Author :
Huang, S. ; Sheng, K. ; Amaratunga, G.A.J. ; Udrea, F. ; Waind, P.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
The breakdown characteristics of 600 V DMOS IGBT are investigated in detail using both experimental results and numerical simulations with self-heating effects included. The blocking characteristics of 1.8 kV trench IGBT are also studied. It is shown that thermally assisted impact ionization causes the IGBT device to breakdown. A negative resistance region of breakdown curve is observed, and the increased bipolar current gain results in more significant negative resistance part for the PT device. With negative charge introduced into the gate oxide, the breakdown characteristics of the trench IGBT can be improved
Keywords :
electric breakdown; impact ionisation; insulated gate bipolar transistors; isolation technology; negative resistance; 1.8 kV; 600 V; DMOS IGBT; IGBT blocking characteristics; IGBT device breakdown; bipolar current gain; blocking characteristics; breakdown characteristics; breakdown curve; gate oxide; negative resistance part; negative resistance region; self-heating effects; thermally assisted impact ionization; trench IGBT; Anodes; Doping; Electric breakdown; Equations; Heat sinks; Impact ionization; Insulated gate bipolar transistors; Neodymium; Temperature; Voltage;
Conference_Titel :
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location :
Beijing
Print_ISBN :
7-80003-464-X
DOI :
10.1109/IPEMC.2000.885438
