The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology

Author

Yim, Seong-Mo ; Chen, Tong ; O, Kenneth K.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

fYear

2000

fDate

2000

Firstpage

157

Lastpage

160

Abstract

The frequency dependence of the model parameters of patterned ground shield (PGS) inductors in large part is explained as a consequence of modeling a distributed system with a lumped model. Using an n⁺-buried/n-well PGS, the peak Q is improved by ~25% with small changes of L and C_p. Having a PGS does not significantly improve isolation between inductors

Keywords

Q-factor; bipolar integrated circuits; buried layers; doping profiles; electromagnetic shielding; elemental semiconductors; inductors; integrated circuit modelling; lumped parameter networks; silicon; PGS inductors; distributed system; frequency dependence; ground shield effects; inductance; inductor isolation; lumped model; model parameters; modeling; n⁺-buried/n-well PGS; on-chip spiral inductors; patterned ground shield inductors; peak capacitance; silicon bipolar technology; Eddy currents; Frequency dependence; Inductors; Integrated circuit modeling; Integrated circuit technology; Microwave technology; Q factor; Shape; Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886193

Filename

886193