DocumentCode
1738712
Title
Efficient error correction code configurations for quasi-nonvolatile data retention by DRAMs
Author
Katayama, Yasunao ; Negishi, Yasushi ; Morioka, Sumio
Author_Institution
IBM Res., Kanagawa, Japan
fYear
2000
fDate
2000
Firstpage
201
Lastpage
209
Abstract
This paper presents analyses of various configurations of error correction codes for the purpose of reducing the parity area for quasi-nonvolatile data retention by DRAMs. By combining long and short error correction codes, we show that the parity area can be reduced to less than 1% of the total memory size, yet the system can offer comparable reliability and adaptability as an earlier design that requires 12.5% parity area. We also claim that even without using any area for parity data, the adaptive control of the DRAM refresh rate can reduce the total risk of data loss. Finally, we discuss an efficient decoder design for long RS codes
Keywords
DRAM chips; Reed-Solomon codes; adaptive control; decoding; error correction codes; DRAM refresh rate; DRAMs; ECC configurations; adaptive control; decoder design; error correction code configurations; long ECCs; long RS codes; memory size; parity area reduction; quasi-nonvolatile data retention; short ECCs; Adaptive control; Application software; Bit error rate; Costs; Decoding; Error correction codes; Laboratories; Pervasive computing; Power system reliability; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Defect and Fault Tolerance in VLSI Systems, 2000. Proceedings. IEEE International Symposium on
Conference_Location
Yamanashi
ISSN
1550-5774
Print_ISBN
0-7695-0719-0
Type
conf
DOI
10.1109/DFTVS.2000.887158
Filename
887158
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