DocumentCode

1738744

Title

Measurement and modeling of a new width dependence of NMOSFET degradation

Author

Schuler, F. ; Kowarik, O. ; Keitel-Schulz, D.

Author_Institution

University of Bundeswehr Munich

fYear

1996

fDate

1996

Firstpage

1675

Lastpage

1678

Keywords

Degradation; Fabrication; Hot carrier effects; Hot carriers; Interface states; Lead compounds; MOSFET circuits; Oxidation; Shearing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on

Print_ISBN

0-7803-3369-1

Type

conf

DOI

10.1109/ESREF.1996.888190

Filename

888190