Title :
Reliability improvement of single-poly quasi self-aligned bicmos BJTS using base surface arsenic compensation
Author :
Vendrame, L. ; Gravier, T. ; Kirtsch, J. ; Monroy, A. ; Chantre, A.
Author_Institution :
Universita´´ di Padova
Keywords :
Annealing; BiCMOS integrated circuits; Bipolar transistors; Cost function; Doping profiles; Fabrication; Implants; Microelectronics; Reproducibility of results; Telecommunications;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888225
