Title :
1.6 kV 4H-SiC Schottky diodes for IGBT applications
Author :
Johnson, C.M. ; Rahimo, M. ; Wright, N.G. ; Hinchley, D.A. ; Horsfall, A.B. ; Morrison, D.J. ; Knights, A.
Author_Institution :
Newcastle upon Tyne Univ., UK
Abstract :
Si fast recovery diodes currently limit the performance of many IGBT powered systems. In this paper SiC Schottky diodes are proposed as an alternative technology. The static and dynamic performance of the SiC Schottky diodes is evaluated and comparison made with Si PiN diodes at currents of up to 20 A and DC link voltages of up to 400 V. The results demonstrate the effectiveness of the SiC devices in reducing the overall system losses and the levels of EMI generated by switching transitions
Keywords :
Schottky diodes; electromagnetic interference; insulated gate bipolar transistors; losses; semiconductor materials; silicon compounds; 1.6 kV; 20 A; 400 V; 4H-SiC Schottky diodes; DC link voltages; EMI generation reduction; IGBT powered systems; Si PiN diodes; Si fast recovery diodes; SiC; dynamic performance; overall system losses reduction; static performance; switching transitions;
Conference_Titel :
Power Electronics and Variable Speed Drives, 2000. Eighth International Conference on (IEE Conf. Publ. No. 475)
Conference_Location :
London
Print_ISBN :
0-85296-729-2
DOI :
10.1049/cp:20000252
