DocumentCode :
1739175
Title :
ESD evaluation of tunneling magnetoresistive (TMR) devices
Author :
Wallash, Albert ; Hillman, James ; Wang, Dexin
Author_Institution :
Quantum Corp., Milpitas, CA, USA
fYear :
2000
fDate :
26-28 Sept. 2000
Firstpage :
470
Lastpage :
474
Abstract :
In this work, we study and compare the dielectric breakdown and human body model electrostatic discharge (ESD) failure levels of tunneling magnetoresistive (TMR) sensors. An equivalent circuit for the TMR device is developed and used in SPICE circuit simulations to study its response to electrostatic discharge. Dielectric breakdown averaged 2.3 V and ESD testing showed device shorting at 8.6 V HBM.
Keywords :
SPICE; circuit simulation; electric breakdown; electrostatic discharge; equivalent circuits; magnetic heads; magnetic recording; magnetic sensors; magnetoresistive devices; tunnelling; 2.3 V; 8.6 V; ESD evaluation; ESD testing; HBM; SPICE circuit simulation; TMR devices; TMR sensors; device shorting; dielectric breakdown; electrostatic discharge response; equivalent circuit; human body model ESD failure; human body model electrostatic discharge failure; tunneling magnetoresistive devices; tunneling magnetoresistive sensors; Biological system modeling; Circuit simulation; Circuit testing; Dielectric breakdown; Electrostatic discharge; Equivalent circuits; Humans; Magnetic sensors; SPICE; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-58537-018-5
Type :
conf
DOI :
10.1109/EOSESD.2000.890118
Filename :
890118
Link To Document :
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