• DocumentCode
    1739178
  • Title

    Electro-thermal effects in mixed-mode device simulation

  • Author

    Grasser, T. ; Selberherr, S.

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Austria
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    43
  • Abstract
    Due to the ever increasing packaging density of integrated circuits, self-heating and thermal coupling effects become more and more important. For state-of-the-art mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much high accuracy is obtained which is especially true for the temperature dependence of the device terminal characteristics. We review the state of the art in mixed-mode device simulation with particular emphases placed on self-heating of individual and thermal coupling effects between different devices
  • Keywords
    semiconductor device models; circuit equation; compact model; electro-thermal effects; integrated circuit; mixed-mode device simulation; self-heating; semiconductor device; temperature dependence; thermal coupling; transport equation; Algorithm design and analysis; Circuit simulation; Doping profiles; Geometry; MOSFETs; Medical simulation; Nonlinear equations; SPICE; Semiconductor process modeling; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.890187
  • Filename
    890187