Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET

Author

Islam, Md Shariful ; Alam, Md Nur Kutubul ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2014

fDate

23-24 May 2014

Firstpage

1

Lastpage

4

Abstract

Effect of gate length on the ballistic performance of nanoscale In_0.2Ga_0.8Sb double gate n-MOSFET is studied. Non equilibrium greens function (NEGF) method is used to find the current-voltage characteristics. Well known SILVACO´s ATLAS device simulation package is used to carry out the simulation. Three different gate length, 10nm, 13nm and 15 nm are analyzed. The simulation result shows that the drain current increases and the threshold voltage decreases with decrease in gate length. But the subthreshold swing increases with it. It reveals that the current voltage characteristic gets better but the electrostatic control of the gate becomes poorer with decrease in gate length.

Keywords

Green´s function methods; MOSFET; ballistics; gallium compounds; indium compounds; nanoelectronics; InGaSb; NEGF method; SILVACO ATLAS device simulation package; ballistic performance; current-voltage characteristics; drain current; electrostatic control; gate length effect; nanoscale double gate n-MOSFET; nonequilibrium Greens function method; size 10 nm; size 13 nm; size 15 nm; subthreshold swing; threshold voltage; Logic gates; MOSFET; Performance evaluation; Silicon; Threshold voltage; Double gate; Gate length; InGaSb MOS; NEGF;

fLanguage

English

Publisher

ieee

Conference_Titel

Informatics, Electronics & Vision (ICIEV), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-5179-6

Type

conf

DOI

10.1109/ICIEV.2014.6850707

Filename

6850707