Title :
Photoluminescence study of hexagonal GaN heteroepitaxial layers grown by molecular beam epitaxy on Al2O3, Si and GaAs substrates
Author :
Pavelescu, E.-M. ; Androulidaki, M. ; Cengher, M. ; Georgakilas, A. ; Cimpoca, V.
Author_Institution :
Inst. of Electron. Structure & Laser, Found. for Res. & Technol.-Hellas, Heraklion-Crete, Greece
Abstract :
The low temperature photoluminescence (PL) characteristics of GaN thin films grown by radio-frequency plasma-assisted molecular beam epitaxy on Al2O3, GaAs and Si substrates have been investigated. A different dominating transition characterized the PL spectrum of each substrate type, indicating the significant role of the substrate in the control of the GaN epilayer´s properties
Keywords :
III-V semiconductors; alumina; gallium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; silicon; substrates; Al2O3; Al2O3 substrate; GaAs; GaAs substrate; GaN thin films; GaN-Al2O3; GaN-GaAs; GaN-Si; PL spectrum; RF plasma-assisted MBE; Si; Si substrate; hexagonal GaN heteroepitaxial layers; low temperature PL characteristics; molecular beam epitaxy; photoluminescence characteristics; Excitons; Gallium arsenide; Gallium nitride; Luminescence; Molecular beam epitaxial growth; Photoluminescence; Physics; Plasma properties; Plasma temperature; Substrates;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890198
