Interdiffusion and reactions in Pd-Si heteropairs

Author

Boltovets, N.S. ; Beketov, G.K. ; Belyaev, A.E. ; Konakova, R.V. ; Milenin, V.V. ; Senkevich, A.I. ; Voitsikhovskyi, D.I.

Author_Institution

State Sci. & Res. Inst. Orion, Kiev, Ukraine

Volume

1

fYear

2000

fDate

2000

Firstpage

121

Abstract

For Pd-n+-Si contacts we investigated interactions between phases that appear during Pd film sputtering at a temperature T=300°C and after heat annealing for 10, 20 and 30 min. at the above temperature. It is shown that palladium silicide Pd₂Si that is produced during the Pd film deposition forms a heat-resistant ohmic contact. The I-V curves were measured before and after rapid (for 60 s) thermal annealing at T=400 and 600°C in the hydrogen atmosphere. They are in good agreement with the calculated ones. The results obtained evidence that Pd-n+-Si contacts remain stable up to T=600°C

Keywords

chemical interdiffusion; elemental semiconductors; ohmic contacts; palladium; rapid thermal annealing; semiconductor-metal boundaries; silicon; sputter deposition; 0 to 600 degC; 10 to 30 min; 300 degC; 60 s; I-V curves; Pd-Si; contact stability; heat-resistant ohmic contact; interdiffusion; rapid thermal annealing; sputtering; Atmosphere; Atmospheric measurements; Hydrogen; Ohmic contacts; Palladium; Rapid thermal annealing; Semiconductor films; Silicides; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2000. CAS 2000 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-5885-6

Type

conf

DOI

10.1109/SMICND.2000.890201

Filename

890201