Hot wall beam epitaxial growth of PbTe layers on BaF2/CaF2/Si(111) substrates

PbTe(111) thin films were grown by the hot wall beam epitaxy (HWBE) technique on Se(111) substrates using intermediate BaF₂/CaF₂ buffers grown by MBE. The best PbTe layers exhibit high resolution X-ray rocking curve linewidth of about 130 arcsec, low temperature Hall mobility of 8×10⁵ cm ²/Vs, and an excellent surface morphology with the roughness of a few angstrom as determined by atomic force microscopy (AFM). The results indicate that high-quality PbTe films can be obtained on fluoride covered Si(111) substrates by simple and cheap HWBE method