Title :
A technology for GaAs-based optoelectronic integrated circuits
Author :
Cengher, D. ; Aperathitis, E. ; Androulidaki, M. ; Deligeorgis, G. ; Cengher, M. ; Amimer, K. ; Hatzopoulos, Z. ; Georgakilas, A.
Author_Institution :
Inst. of Electron. Structure & Laser, Found. for Res. & Technol.-HELLAS, Heraklion-Crete, Greece
Abstract :
The use of a single growth epitaxial structure was investigated for planar integration of GaAs-based laser diodes and photodetectors. Cleaved mirror lasers, non-guided wave and guided wave photodetectors were fabricated and measured, for structure optimization. A BCl3 RIE process was developed and lasers with RIE etched mirrors were fabricated exhibiting a threshold current density less than 1 kA/cm2
Keywords :
III-V semiconductors; current density; gallium arsenide; integrated optoelectronics; photodetectors; semiconductor epitaxial layers; semiconductor lasers; sputter etching; GaAs; RIE process; cleaved mirror lasers; guided wave photodetectors; laser diodes; nonguided wave photodetectors; optoelectronic integrated circuits; planar integration; single growth epitaxial structure; structure optimization; threshold current density; Diode lasers; Gallium arsenide; Integrated circuit technology; Laser theory; Mirrors; Optical waveguides; Photodetectors; Photonic integrated circuits; Surface emitting lasers; Threshold current;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890209
