Some properties of SiC layers obtained from C60 precursors

The interaction between C₆₀ molecules and the Si(100) surface and the preparation of silicon-carbide thin films by thermal reaction of C₆₀ molecules with the Si(100) surface has been investigated using X-ray photoelectron spectroscopy, reflection high energy electron diffraction and atomic force microscopy measurements. The effect of annealing temperature on the SiC formation is discussed. It is found that the C₆₀ molecules bond covalently with silicon and the number of bonds increase upon increasing the annealing temperature. Annealing at T⩾830°C entails the formation of stoichiometric silicon carbide clusters that coalesce to form a continuous SiC. Deep pits acting as silicon diffusion channels are present