Title :
Excess noise modelling of SiGe BiCMOS devices
Author :
Ibarra, J. ; Vescovi, D. ; Bary, L. ; Borgarino, M. ; Kovacic, S. ; Lafontaine, H. ; Graffeuil, J. ; Plana, R.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
This paper presents an exhaustive characterization of the low frequency noise behavior of SiGe HBT which is used to locate the 1/f noise sources within the device. We demonstrate that 1/f noise sources are present at the emitter base junction, at the collector terminal and at the base and emitter resistance
Keywords :
1/f noise; Ge-Si alloys; bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f noise; HBT; SiGe; SiGe BiCMOS device; excess noise model; low-frequency noise; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Low-frequency noise; Network topology; Noise figure; Noise generators; Silicon germanium;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890245
