• DocumentCode
    1739217
  • Title

    Relaxation semiconductor diodes: a practical review

  • Author

    Jones, B.K. ; Sengouga, N. ; Dehimi, L.

  • Author_Institution
    Dept. of Phys., Lancaster Univ., UK
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    323
  • Abstract
    Relaxation semiconductors are a class of semiconductor which is now quite common and important, but not often discussed. They occur when the material has high resistivity, often due to compensation, and contains defects due to impurities or damage which enhance the carrier generation-recombination rate. Hence they include semi-insulators. The properties differ from the familiar lifetime semiconductor materials. These and the underlying principles will be outlined using modelling to show that the experimental results found for semi-insulating GaAs and irradiated silicon indicate features typical of this class of semiconductor
  • Keywords
    semiconductor diodes; GaAs; Si; carrier generation-recombination rate; compensation; defect; impurity; irradiated silicon; relaxation semiconductor diode; resistivity; semi-insulating GaAs; Conductivity; Gallium arsenide; Physics; Radiative recombination; Schottky diodes; Semiconductor diodes; Semiconductor impurities; Semiconductor materials; Silicon; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.890246
  • Filename
    890246