• DocumentCode
    1739219
  • Title

    Radiation effects in low-temperature stressed power VDMOS transistors

  • Author

    Djoric-Veljkovic, S. ; Davidovic, V. ; Golubovic, S. ; Stojadinovic, N.

  • Author_Institution
    Fac. of Technol., Nis Univ., Serbia
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    337
  • Abstract
    In this paper the results of investigation of radiation effects in low-temperature stressed commercial n-channel power VDMOS transistors are presented. By analyzing obtained results, the mechanisms responsible for observed effects are modeled
  • Keywords
    gamma-ray effects; power MOSFET; N-channel power VDMOS transistor; low-temperature stress; radiation effects; Artificial satellites; Capacitors; Frequency; Power engineering and energy; Power supplies; Radiation effects; Stress; Temperature; Threshold voltage; Transformers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.890249
  • Filename
    890249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1739219