Gas source MBE grown InGaAs(P)N/InP long wavelength (λ>1.65 μm) photodetectors using a solid as source

Summary form only given. We have recently demonstrated that incorporation of nitrogen into InGaAs may extend the wavelength of InP based photodetectors beyond 1.65 μm and reported the first lattice matched InGaAsPN based photodetectors on InP with cutoff wavelengths extending beyond 1.65 μm. We propose that the relatively low quantum efficiency and high dark current for these InGaAsPN detectors was due to the N-H complex formation and local strain induced defects. These results indicate that high temperature annealed InGaAsPN materials grown by solid source As are promising for use in detectors with response λ<5 μm