Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors

Author

Fu, L. ; Tan, H.H. ; Jagadish, C. ; Li, Ning ; Lu, Wei ; Shen, S.C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

1

fYear

2000

fDate

2000

Firstpage

88

Abstract

The study of quantum well infrared photodetectors (QWIPs) has been progressing rapidly during last two decades. Recently, ion implantation, as a post-growth technique for quantum well intermixing (QWI), has been utilized to tune the wavelength of QWIPs, and to achieve the multi-color QWIPs. In this work, a simple and effective ion-implantation scheme, the high energy implantation was used to tune the QWIPs spectral response

Keywords

colour; infrared detectors; ion implantation; molecular beam epitaxial growth; optical tuning; semiconductor quantum wells; QWIP spectral response; detection wavelength tuning; high energy ion implantation; ion implantation; multi-color QWIPs; quantum well infrared photodetectors; Dark current; Gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Photodetectors; Physics; Power engineering and energy; Rapid thermal annealing; Substrates; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890687

Filename

890687