Title :
Far-infrared near field microscopy
Author :
Federici, J. ; Mitrofanov, O. ; Brener, I. ; Harel, R. ; Wynn, J.D. ; Lee, M.
Author_Institution :
Dept. of Phys., New Jersey Inst. of Technol., Newark, NJ, USA
Abstract :
We report on a near-field THz microscopic probe based on a low temperature (LT) grown GaAs photoconducting antenna. The near-field probe consists of an integrated aperture-type probe and photoconducting antenna. In this design, the antenna dipole is located in the near field region of the aperture so that the strong evanescent THz electric field is preferentially detected. A schematic diagram of the near-field detector is presented
Keywords :
gallium arsenide; infrared detectors; microscopy; photoconducting devices; probes; submillimetre wave antennas; submillimetre wave detectors; GaAs; GaAs photoconducting antenna; antenna dipole; far-infrared near field microscopy; integrated aperture-type probe; low temperature grown; near field region; near-field THz microscopic probe; near-field detector; near-field probe; preferentially detected; strong evanescent THz electric field; Aperture antennas; Detectors; Dipole antennas; Gallium arsenide; Microscopy; Near-field radiation pattern; Object detection; Optical surface waves; Photoconductivity; Probes;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890733
