High power, high efficiency interband cascade lasers

Author

Bradshaw, John L. ; Bruno, John D. ; Pham, John T. ; Wortman, Donald E. ; Yang, Rui Q.

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

243

Abstract

Interband cascade (IC) laser designs can circumvent the fast phonon scattering loss in intersubband QC lasers and suppress Auger recombination through band-structure engineering resulting in a low threshold current density. These properties make mid-IR IC lasers based on InAs-GaInSb type-II QWs promising for delivering high output powers and relatively high operating temperatures

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; infrared sources; quantum well lasers; Auger recombination suppression; InAs-GaInSb; InAs-GaInSb type-II QW lasers; band-structure engineering; fast phonon scattering loss; high operating temperatures; high output powers; high power high efficiency interband cascade lasers; interband cascade laser designs; intersubband QC lasers; low threshold current density; mid-IR IC lasers; Design engineering; Optical design; Phonons; Power engineering and energy; Power generation; Power lasers; Quantum cascade lasers; Scattering; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890767

Filename

890767