Title :
High power, high efficiency interband cascade lasers
Author :
Bradshaw, John L. ; Bruno, John D. ; Pham, John T. ; Wortman, Donald E. ; Yang, Rui Q.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Interband cascade (IC) laser designs can circumvent the fast phonon scattering loss in intersubband QC lasers and suppress Auger recombination through band-structure engineering resulting in a low threshold current density. These properties make mid-IR IC lasers based on InAs-GaInSb type-II QWs promising for delivering high output powers and relatively high operating temperatures
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; infrared sources; quantum well lasers; Auger recombination suppression; InAs-GaInSb; InAs-GaInSb type-II QW lasers; band-structure engineering; fast phonon scattering loss; high operating temperatures; high output powers; high power high efficiency interband cascade lasers; interband cascade laser designs; intersubband QC lasers; low threshold current density; mid-IR IC lasers; Design engineering; Optical design; Phonons; Power engineering and energy; Power generation; Power lasers; Quantum cascade lasers; Scattering; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890767
