High power linear arrays of 1.9 μm laser diodes

Author

Vermaak, Jacobus S. ; Sugg, Alan ; Olsen, Gregory H. ; Gokhale, Milind ; Forrest, Stephen R.

Author_Institution

Sensors Unlimited, Princeton, NJ, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

247

Abstract

We describe the development of high-power single-aperture InGaAsP-InP laser diodes at 1.9 μm emitting 1 W CW and 2.2 W pulsed optical power. Linear arrays of 10 of these diodes gave 5 W CW and 11 W pulsed optical power. The InGaAs-InGaAsP-InP broadened waveguide (BW) lasers were grown by using a Riber gas-source molecular beam epitaxy (GSMBE) reactor. The structure consists of a two-step undoped confinement heterostructure or waveguide sandwiched between highly doped InP cladding regions. The QWs are composed of compressively strained InGaAs layers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor laser arrays; waveguide lasers; 1.9 mum; 11 W; 2.2 W; 5 W; InGaAs-InGaAsP-InP; InGaAs-InGaAsP-InP broadened waveguide lasers; InGaAsP-InP laser; Riber gas-source molecular beam epitaxy reactor; compressively strained InGaAs layers; high power linear diode laser arrays; high-power; highly doped InP cladding regions; pulsed optical power; quantum well lasers; single-aperture; two-step undoped confinement heterostructure; Diode lasers; Gas lasers; Inductors; Molecular beam epitaxial growth; Optical arrays; Optical pulses; Optical waveguides; Semiconductor laser arrays; Stimulated emission; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890769

Filename

890769