Responsivity enhancement in metal-semiconductor-metal photodetector with nanometer fingers

Author

Kim, Junghwan ; Safwat, Amr M E ; Johnson, F.G. ; Johnson, W.B. ; Yang, C.H. ; Lee, Chi H.

Author_Institution

Lab. for Phys. Sci., College Park, MD, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

262

Abstract

InGaAs metal-semiconductor-metal (MSM) photodetectors are one of the promising devices for 1.55 μm lightwave communication systems because of their high-speed performance derived from the low capacitance per unit area. Since the MSM photodetector is illuminated through the top finger electrodes, electrodes block a fraction of the incident light. Due to shadowing by electrode, the responsivity of MSM photodetector is low and the low responsivity is an obstacle for real system implementation. Since the internal efficiency is determined by material and thickness of absorption layer, the responsivity is controllable by the electrode structure. The responsivity can be increased by reducing finger width

Keywords

III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; 1.55 micron; InGaAs; finger electrode; lightwave communication system; metal-semiconductor-metal photodetector; responsivity; Absorption; Bandwidth; Charge carrier processes; Educational institutions; Electrodes; Fingers; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890777

Filename

890777