DocumentCode
1739365
Title
Quantum dot lasers
Author
Bimberg, D. ; Ledentsov, N.N. ; Sellin, R. ; Ribbat, Ch. ; Mao, M. ; Grundmann, M. ; Ustinov, V.M. ; Zhukov, A.E. ; Kovsh, A.R. ; Alferov, Zh.I. ; Lott, J.A.
Author_Institution
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Volume
1
fYear
2000
fDate
2000
Firstpage
302
Abstract
We presents both edge emitting and surface emitting quantum dot laser research. Growth is by both MOCVD and MBE
Keywords
MOCVD; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum dots; surface emitting lasers; InGaAs; MBE; MOCVD; edge emitting lasers; quantum dot lasers; surface emitting quantum dot laser; Charge carriers; Chemical lasers; Laser modes; Laser theory; Molecular beam epitaxial growth; Pulsed laser deposition; Quantum dot lasers; Surface emitting lasers; US Department of Transportation; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location
Rio Grande
ISSN
1092-8081
Print_ISBN
0-7803-5947-X
Type
conf
DOI
10.1109/LEOS.2000.890798
Filename
890798
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