• DocumentCode
    1739365
  • Title

    Quantum dot lasers

  • Author

    Bimberg, D. ; Ledentsov, N.N. ; Sellin, R. ; Ribbat, Ch. ; Mao, M. ; Grundmann, M. ; Ustinov, V.M. ; Zhukov, A.E. ; Kovsh, A.R. ; Alferov, Zh.I. ; Lott, J.A.

  • Author_Institution
    Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    302
  • Abstract
    We presents both edge emitting and surface emitting quantum dot laser research. Growth is by both MOCVD and MBE
  • Keywords
    MOCVD; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum dots; surface emitting lasers; InGaAs; MBE; MOCVD; edge emitting lasers; quantum dot lasers; surface emitting quantum dot laser; Charge carriers; Chemical lasers; Laser modes; Laser theory; Molecular beam epitaxial growth; Pulsed laser deposition; Quantum dot lasers; Surface emitting lasers; US Department of Transportation; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
  • Conference_Location
    Rio Grande
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5947-X
  • Type

    conf

  • DOI
    10.1109/LEOS.2000.890798
  • Filename
    890798