Low-bias and high-saturation-power traveling-wave electroabsorption modulator by using InGaAsP-InGaAsP MQW

Author

Chiu, Yi-Jen ; Kaman, Volkan ; Abraham, Patrick ; Zhang, Sheng Z. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

326

Abstract

Summary form only given. We utilize the traveling-wave structure and strain-compensated material growth to achieve high efficiency with low driving voltage and high saturation power. An InGaAsP-based material grown by MOCVD is used to fabricate a 300 μm long ridge waveguide type EA modulator. The active region consists of 10 quantum-wells

Keywords

III-V semiconductors; MOCVD; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical saturation; optical waveguides; ridge waveguides; semiconductor quantum wells; 300 mum; InGaAsP-InGaAsP; InGaAsP-based material; InGaAsP/InGaAsP MQW; MOCVD; active region; high efficiency; high saturation power; high-saturation-power; low driving voltage; low-bias; ridge waveguide type EA modulator; strain-compensated material growth; traveling-wave electroabsorption modulator; Bit error rate; Chirp modulation; Extinction ratio; Low voltage; Optical modulation; Optical receivers; Optical saturation; Optical sensors; Quantum well devices; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890810

Filename

890810