Title :
Ultrashort quantum dot microlasers
Author :
Rennon, S. ; Avary, K. ; Klopf, F. ; Wolf, A. ; Emmerling, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Wurzburg Univ., Germany
Abstract :
We have fabricated high performance ultrashort quantum dot microlasers based on deeply etched distributed Bragg reflector (DBR) mirrors with cavity lengths down to 16 μm and threshold currents as low as 1.2 mA for a 30 μm and 3.2 mA for a 20 μm cavity length, respectively. The microlasers were fabricated on a GaInAs/AlGaAs laser structure with a single layer of self organized GaInAs quantum dots. Due to the high device performance, edge emitting quantum dot microlasers seem to be a very promising candidate for light emitters in future large scale integrated optoelectronic circuits. To our knowledge these are the shortest CW operating edge emitting lasers to date
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; microcavity lasers; quantum well lasers; scanning electron microscopy; self-assembly; semiconductor quantum dots; 1.2 to 3.2 mA; 16 to 30 micron; CW operating edge emitting lasers; DBR mirrors; GaInAs-AlGaAs; GaInAs/AlGaAs laser structure; cavity length; deeply etched distributed Bragg reflector mirrors; edge emitting quantum dot microlasers; light emitters; optoelectronic circuits; self organized GaInAs quantum dots; threshold current; ultrashort quantum dot microlasers; Circuits; Distributed Bragg reflectors; Etching; Integrated optoelectronics; Large scale integration; Light emitting diodes; Mirrors; Quantum dot lasers; Quantum dots; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890834
