Ultrashort quantum dot microlasers

Author

Rennon, S. ; Avary, K. ; Klopf, F. ; Wolf, A. ; Emmerling, M. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Wurzburg Univ., Germany

Volume

1

fYear

2000

fDate

2000

Firstpage

374

Abstract

We have fabricated high performance ultrashort quantum dot microlasers based on deeply etched distributed Bragg reflector (DBR) mirrors with cavity lengths down to 16 μm and threshold currents as low as 1.2 mA for a 30 μm and 3.2 mA for a 20 μm cavity length, respectively. The microlasers were fabricated on a GaInAs/AlGaAs laser structure with a single layer of self organized GaInAs quantum dots. Due to the high device performance, edge emitting quantum dot microlasers seem to be a very promising candidate for light emitters in future large scale integrated optoelectronic circuits. To our knowledge these are the shortest CW operating edge emitting lasers to date

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; microcavity lasers; quantum well lasers; scanning electron microscopy; self-assembly; semiconductor quantum dots; 1.2 to 3.2 mA; 16 to 30 micron; CW operating edge emitting lasers; DBR mirrors; GaInAs-AlGaAs; GaInAs/AlGaAs laser structure; cavity length; deeply etched distributed Bragg reflector mirrors; edge emitting quantum dot microlasers; light emitters; optoelectronic circuits; self organized GaInAs quantum dots; threshold current; ultrashort quantum dot microlasers; Circuits; Distributed Bragg reflectors; Etching; Integrated optoelectronics; Large scale integration; Light emitting diodes; Mirrors; Quantum dot lasers; Quantum dots; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890834

Filename

890834