DocumentCode :
1739758
Title :
Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices
Author :
Huang, L.J. ; Chan, K. ; Solomon, P.M. ; Jones, E. ; Emic, C.D. ; Lee, W.C. ; McFreely, F.R. ; Wong, H.-S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2000
fDate :
2000
Firstpage :
14
Lastpage :
15
Abstract :
As the current CMOS VLSI technology approaching fundamental limits in the deep submicron regime, double-gate SOI devices provide an alternative device structure to further extend the device scaling approach (Wong et al, 1997; Wong et al, 1998; Huang et al, 1999). Furthermore, the replacement of traditional poly Si gate with proper metal gate materials such as tungsten is a promising approach to improve the conductance of the gate electrode and to eliminate the depletion in the poly-Si gate (Buchanan et al, 1998). However, the compatibility of metal materials with current Si VLSI technology remains a challenge. In this work, new processes have been developed to incorporate mid-gap metal tungsten in SOI substrates. 200 mm SOI substrates with buried tungsten ground-plane have been fabricated for the purpose of fabricating double-gate SOI devices with metal back-gate
Keywords :
CMOS integrated circuits; VLSI; buried layers; integrated circuit interconnections; integrated circuit metallisation; silicon-on-insulator; substrates; tungsten; wafer bonding; 200 mm; CMOS VLSI technology; SOI substrates; Si; Si VLSI technology; SiO2-W-SiO2-Si; buried tungsten ground-plane; device scaling; device structure; double-gate SOI devices; gate electrode conductance; metal back-gate; metal ground-plane; metal materials; mid-gap metal tungsten; poly Si gate; poly-Si gate depletion; silicon substrate preparation; tungsten metal gate materials; Annealing; CMOS technology; Conducting materials; Inorganic materials; Passivation; Silicon; Substrates; Tungsten; Very large scale integration; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
ISSN :
1078-621X
Print_ISBN :
0-7803-6389-2
Type :
conf
DOI :
10.1109/SOI.2000.892746
Filename :
892746
Link To Document :
بازگشت