The current gain of bipolar transistor in the IGBT measurement

Author

Parnklang, Jirawath ; Niemcharoen, Surasak ; Yardsamer, Saranya

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

Volume

1

fYear

2000

fDate

2000

Firstpage

445

Abstract

The common emitter current gain (β₀) of the bipolar transistor in the IGBT (insulated gate bipolar transistor) structure semiconductor device is measured in this paper. The first step of the measurement is to find the early voltage (V_A) of the device. Then the early voltage is used for calculating the base width (W _B) and the doping density in the base (N_B) of the device. Finally, we can use those parameters to calculate the common emitter current gain. The junction capacitance of the collector and the emitter are also measured to find the doping concentration in the emitter. All of the parameters are used for calculating the middle frequency common emitter current gain (β₀). The experimental results show that measurement errors are not more than 5%

Keywords

carrier density; electric current measurement; gain measurement; insulated gate bipolar transistors; power transistors; IGBT measurement; base width; bipolar transistor; collector junction capacitance; common emitter current gain; doping concentration; doping density; early voltage; insulated gate bipolar transistor; measurement errors; Bipolar transistors; Capacitance measurement; Current measurement; Frequency; Gain measurement; Insulated gate bipolar transistors; Semiconductor device doping; Semiconductor device measurement; Semiconductor devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2000. Proceedings

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-6355-8

Type

conf

DOI

10.1109/TENCON.2000.893708

Filename

893708