Title :
Epitaxy-ready reflecting substrates for resonant-cavity-enhanced silicon photodetectors
Author :
Emsley, Mathew K. ; Ünlü, M. Sehim
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
Abstract :
We have presented a commercially reproducible single crystalline silicon wafer with a buried distributed Bragg reflector. These wafers can be used for fabricating silicon resonant cavity enhanced (RCE) photodiodes with high bandwidth efficiencies as well as low dark current
Keywords :
SIMOX; dark conductivity; molecular beam epitaxial growth; optical fabrication; photodiodes; silicon; substrates; Si resonant cavity enhanced photodiode fabrication; Si-SiO2; buried distributed Bragg reflector; epitaxy-ready reflecting substrates; high bandwidth efficiencies; low dark current; resonant-cavity-enhanced silicon photodetectors; single crystalline silicon wafer; Crystallization; Ice; Optical refraction; Optical variables control; Photodetectors; Photodiodes; Reflectivity; Resonance; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.893899
