DocumentCode
1739946
Title
Evaluation of high-T0 1.3 μm strained quantum well lasers on InGaAs ternary substrates by frequency response
Author
Sekine, Norihiko ; Otsubo, K. ; Nishijima, Y. ; Aoki, O. ; Kuramata, A. ; Sugawara, Mariko ; Ishikawa, II
Author_Institution
RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan
Volume
2
fYear
2000
fDate
2000
Firstpage
442
Abstract
We have fabricated 1.3 μm strained quantum well lasers on InGaAs ternary substrate. A low threshold current density of <80 A/cm 2/well and high T0 of >100 K were simultaneously realized. Furthermore, it was found that dg/dn of the sample was enhanced by the effect of the deep potential well. By improving the quality of InGaAs substrates, larger dg/dn should be obtainable
Keywords
III-V semiconductors; frequency response; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; substrates; 1.3 μm strained quantum well lasers; 1.3 mum; InGaAs; InGaAs substrates; InGaAs ternary substrate; InGaAs ternary substrates; deep potential well; frequency response; low threshold current density; strained quantum well lasers; Art; Epitaxial growth; Indium gallium arsenide; Laser beam cutting; Potential well; Quantum well lasers; Substrates; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location
Rio Grande
ISSN
1092-8081
Print_ISBN
0-7803-5947-X
Type
conf
DOI
10.1109/LEOS.2000.893904
Filename
893904
Link To Document