Title :
Continuous-wave operation of InGaN/GaN violet laser diodes grown by low-pressure MOVPE
Author :
Hasnain, G. ; Takeuchi, Tetsuya ; Schneider, R. ; Song, Soonsil ; Twist, Rose ; Blomqvist, M. ; Kocot, Chris ; Flory, Curt
Author_Institution :
Agilent Technol., Palo Alto, CA, USA
Abstract :
Continuous-wave operation of etched-facet InGaN/GaN multi-quantum-well laser diodes grown by low pressure MOVPE on sapphire substrate is demonstrated on-wafer at 15°C. The threshold current density and voltage are 9.1 kA/cm2 and 7.6 V respectively
Keywords :
III-V semiconductors; MOCVD; current density; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; 15 C; 7.6 V; InGaN-GaN; V-I characteristics; continuous-wave operation; etched-facet MQW; low-pressure MOVPE; sapphire substrate; threshold current density; threshold voltage; violet laser diodes; Coatings; Current measurement; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium nitride; Laser beam cutting; Mirrors; Optical pulses; Threshold voltage;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894012
