Title :
Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy
Author :
Chang, W.Y. ; Feng, Z.C. ; Chua, S.J. ; Lin, J.
Author_Institution :
Dept. of Phys., Nat. Univ. of Singapore, Singapore
Abstract :
We report a study on the photoluminescence (PL) characteristic of CdTe epitaxial film. The studied CdTe materials were grown on InSb (001) by molecular beam epitaxy (MBE). Low temperature (2 K) PL spectra were measured at different excitation power level while laser beam was focused on the same spot of the sample. From PL spectra, overlapping peaks from excitation transition, shallow and deep donor-acceptor-pair (DAP) transitions and longitudinal optical (LO) phonon replicas were observed
Keywords :
II-VI semiconductors; cadmium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; 2 K; CdTe; CdTe epitaxial film; InSb; InSb substrate; LO phonon replica; donor-acceptor-pair transition; excitation power dependence; molecular beam epitaxy; photoluminescence spectra; Digital audio players; Laser beams; Laser excitation; Laser transitions; Molecular beam epitaxial growth; Optical materials; Photoluminescence; Power lasers; Power measurement; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894089
