Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy

Author

Chang, W.Y. ; Feng, Z.C. ; Chua, S.J. ; Lin, J.

Author_Institution

Dept. of Phys., Nat. Univ. of Singapore, Singapore

Volume

2

fYear

2000

fDate

2000

Firstpage

786

Abstract

We report a study on the photoluminescence (PL) characteristic of CdTe epitaxial film. The studied CdTe materials were grown on InSb (001) by molecular beam epitaxy (MBE). Low temperature (2 K) PL spectra were measured at different excitation power level while laser beam was focused on the same spot of the sample. From PL spectra, overlapping peaks from excitation transition, shallow and deep donor-acceptor-pair (DAP) transitions and longitudinal optical (LO) phonon replicas were observed

Keywords

II-VI semiconductors; cadmium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; 2 K; CdTe; CdTe epitaxial film; InSb; InSb substrate; LO phonon replica; donor-acceptor-pair transition; excitation power dependence; molecular beam epitaxy; photoluminescence spectra; Digital audio players; Laser beams; Laser excitation; Laser transitions; Molecular beam epitaxial growth; Optical materials; Photoluminescence; Power lasers; Power measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.894089

Filename

894089