Title :
Enhancement of wafer test/package yields by oxide-capping of microlens in CMOS image sensor
Author :
Oh, H.S. ; Hong, H.J. ; Lee, J.I. ; Park, S.J. ; Kwon, K.K. ; Hwang, J.
Author_Institution :
Syst. IC R&D Div., Hyundai Electron. Ind., Kyoungki, South Korea
Abstract :
This paper reports the oxide-capping process of microlenses in a CMOS image sensor and its effect on wafer test/package yields of the product. CMOS image sensors with 8 μm×8 μm pixel size were fabricated by 0.5 μm CMOS logic process incorporated with color filter and microlens processes. After the formation of the microlens, a thin oxide film was deposited as a capping material, and finally pad windows were opened. From the analysis of the yield data, it is concluded that the oxide-capping of the microlenses guarantees the stable wafer test yield and also gives rise to noticeable increase of package yield for CMOS image sensors
Keywords :
CMOS image sensors; integrated circuit packaging; integrated circuit technology; integrated circuit testing; integrated circuit yield; microlenses; passivation; 0.5 micron; CMOS image sensor; CMOS logic process; colour filter process; microlens; oxide-capping; package yields; pad window opening; passivation oxide; thin oxide film deposition; wafer test yields; yield data analysis; CMOS image sensors; CMOS logic circuits; CMOS process; Color; Filters; Lenses; Microoptics; Packaging; Pixel; Testing;
Conference_Titel :
ASICs, 2000. AP-ASIC 2000. Proceedings of the Second IEEE Asia Pacific Conference on
Conference_Location :
Cheju
Print_ISBN :
0-7803-6470-8
DOI :
10.1109/APASIC.2000.896958