DocumentCode :
1741430
Title :
Effects of refractoriness on the statistics of the post-membrane output IPIs
Author :
Hu, X.L. ; Zhang, Y.T.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
589
Abstract :
Refractory period is an important factor that affects output inter-pulse intervals (LPIs) statistics at post-membrane position of a gap function. However this factor is seldom considered in analyses of the synaptic pulse train transmission. Based on the previous theoretical study, a general form of the p.d.f. of post-membrane output IPIs is obtained in this work. The exponential and Gaussian distributed input IPIs to the gap junction are used for verification, and the results show that the theoretical results are consistent with the simulated ones for the two cases studied
Keywords :
Gaussian distribution; bioelectric potentials; biomembranes; neurophysiology; physiological models; statistics; Gaussian distributed input; gap function; neuronal membrane; neurophysiological modeling; output inter-pulse intervals; post-membrane; post-membrane output IPIs statistics; refractoriness effects; synaptic pulse train transmission analysis; Biological neural networks; Biological system modeling; Biomembranes; Electrodes; Probability; Random processes; Random variables; Signal processing; Statistical distributions; Statistics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Engineering in Medicine and Biology Society, 2000. Proceedings of the 22nd Annual International Conference of the IEEE
Conference_Location :
Chicago, IL
ISSN :
1094-687X
Print_ISBN :
0-7803-6465-1
Type :
conf
DOI :
10.1109/IEMBS.2000.900812
Filename :
900812
Link To Document :
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