Title :
Theory of near-field optics applied to semiconductor nanostructures
Author :
Knorr, A. ; Hanewinkel, B. ; Koch, S.W.
Author_Institution :
Dept. of Phys., Philipps-Univ., Marburg, Germany
Abstract :
Summary form only given. The optical response of nanostructured semiconductors around the bandgap is dominated by the properties of excitons in interface potentials fluctuating: on a mesoscopic length scale. On this length scale, scanning near-field optical microscopy (SNOM) extents the optical resolution to a fraction of the wavelength of light. The results of a finite difference time domain evaluation of Maxwell´s equations for the near-field response of weakly quantum confined excitons is presented. In contrast to previous work, our approach is focused on the combined dynamics of spatial as well as time-resolved phenomena in semiconductor near-field optics. The analysis is applied to a series of relevant problems in the wide field of SNOM.
Keywords :
Maxwell equations; excitons; high-speed optical techniques; image resolution; nanostructured materials; near-field scanning optical microscopy; Maxwell´s equations; SNOM; excitons; finite difference time domain evaluation; interface potentials; mesoscopic length scale; nanostructured semiconductors; near-field optics; near-field response; optical resolution; scanning near-field optical microscopy; semiconductor nanostructures; semiconductor near-field optics; time-resolved phenomena; weakly quantum confined excitons; Frequency estimation; Geometry; Nonlinear optics; Optical reflection; Optical refraction; Optical variables control; Pulse amplifiers; Reflectivity; Refractive index; Semiconductor nanostructures;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7
