DocumentCode :
1741696
Title :
Near-field spectroscopy of surface excitations
Author :
Joulain, K. ; Carminati, R. ; Greffet, J.-J. ; Shchegrov, A.V.
Author_Institution :
Ecole Centrale de Paris, Chatenay-Malabry, France
fYear :
2000
fDate :
12-12 May 2000
Firstpage :
20
Abstract :
Summary form only given. We provide a powerful tool to describe near-field spectroscopic effects in thermal emission of light. Due to the possibility of measuring near-field spectra by using near-field optics techniques, the work could find applications in solid-state spectroscopy. It should also be helpful in modeling nanoscale radiative transfer of energy, where transfer through non-radiating modes is of fundamental importance. We show that near-field excitations dramatically influence the spectrum of the emitted radiation. For example, we study a SiC surface in the infrared part of the spectrum. The energy density has a spectrum which changes strongly during the transition from the near field to the far field. The near-field spectrum is a signature of the excitation of surface-phonon polaritons at wavelengths around /spl lambda/=11.3 /spl mu/m. We show that the features of this spectrum can be interpreted using the density of states of the surface modes.
Keywords :
diffraction gratings; electronic density of states; infrared spectra; polaritons; silicon compounds; surface phonons; surface states; 11.3 mum; SiC; SiC surface; density of states; emitted radiation; energy density; far field spectrum; fundamental importance; nanoscale radiative energy transfer; near-field excitations; near-field optics techniques; near-field spectra; near-field spectroscopic effects; near-field spectroscopy; near-field spectrum; nonradiating modes; solid-state spectroscopy; surface excitations; surface modes; surface-phonon polaritons; thermal emission; Coherence; Fourier transforms; Gratings; Optical surface waves; Optimized production technology; Resonance; Silicon carbide; Spectroscopy; Stimulated emission; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
ISSN :
1094-5695
Print_ISBN :
1-55752-608-7
Type :
conf
Filename :
901352
Link To Document :
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