• DocumentCode
    1741696
  • Title

    Near-field spectroscopy of surface excitations

  • Author

    Joulain, K. ; Carminati, R. ; Greffet, J.-J. ; Shchegrov, A.V.

  • Author_Institution
    Ecole Centrale de Paris, Chatenay-Malabry, France
  • fYear
    2000
  • fDate
    12-12 May 2000
  • Firstpage
    20
  • Abstract
    Summary form only given. We provide a powerful tool to describe near-field spectroscopic effects in thermal emission of light. Due to the possibility of measuring near-field spectra by using near-field optics techniques, the work could find applications in solid-state spectroscopy. It should also be helpful in modeling nanoscale radiative transfer of energy, where transfer through non-radiating modes is of fundamental importance. We show that near-field excitations dramatically influence the spectrum of the emitted radiation. For example, we study a SiC surface in the infrared part of the spectrum. The energy density has a spectrum which changes strongly during the transition from the near field to the far field. The near-field spectrum is a signature of the excitation of surface-phonon polaritons at wavelengths around /spl lambda/=11.3 /spl mu/m. We show that the features of this spectrum can be interpreted using the density of states of the surface modes.
  • Keywords
    diffraction gratings; electronic density of states; infrared spectra; polaritons; silicon compounds; surface phonons; surface states; 11.3 mum; SiC; SiC surface; density of states; emitted radiation; energy density; far field spectrum; fundamental importance; nanoscale radiative energy transfer; near-field excitations; near-field optics techniques; near-field spectra; near-field spectroscopic effects; near-field spectroscopy; near-field spectrum; nonradiating modes; solid-state spectroscopy; surface excitations; surface modes; surface-phonon polaritons; thermal emission; Coherence; Fourier transforms; Gratings; Optical surface waves; Optimized production technology; Resonance; Silicon carbide; Spectroscopy; Stimulated emission; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    1094-5695
  • Print_ISBN
    1-55752-608-7
  • Type

    conf

  • Filename
    901352