Stimulated emission dynamics in self-assembled InAs/GaAs quantum dots

Author

Lingk, C. ; von Plessen, G. ; Feldmann, J. ; Stock, K. ; Arzberger, M. ; Amann, M.-C. ; Abstreiter, G.

Author_Institution

Photonics & Optoelectron. Grou, Munich Univ., Munchen, Germany

fYear

2000

fDate

12-12 May 2000

Firstpage

40

Abstract

Summary form only given. Self-assembled semiconductor quantum dots have found interest as gain materials for semiconductor lasers. While time-resolved studies on quantum dots have mainly focused on the spontaneous recombination dynamics, little is known about the dynamics of lasing and stimulated emission from the dots. In this contribution we investigate the dynamics of stimulated emission in self assembled InAs-GaAs quantum dots. The sample studied here consists of 7 layers of self assembled InAs quantum dots embedded in GaAs. This active layer is sandwiched in between two 1.2 /spl mu/m thick AlGaAs layers, resulting in a waveguide structure.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; self-assembly; semiconductor quantum dots; stimulated emission; 1.2 mum; AlGaAs layers; InAs-GaAs; active layer; gain materials; lasing dynamics; self assembled InAs quantum dots; self assembled InAs-GaAs quantum dots; self-assembled InAs/GaAs quantum dots; semiconductor lasers; spontaneous recombination dynamics; stimulated emission; stimulated emission dynamics; time-resolved studies; waveguide lasers; waveguide structure; Assembly; Conducting materials; Gallium arsenide; Pulse amplifiers; Quantum dot lasers; Quantum dots; Radiative recombination; Spontaneous emission; Stimulated emission; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest

Conference_Location

San Francisco, CA, USA

ISSN

1094-5695

Print_ISBN

1-55752-608-7

Type

conf

Filename

901561