Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

Author

Watatani, C. ; Edamatsu, K. ; Itoh, T. ; Hayashi, H. ; Shimomura, S. ; Hiyamizu, S.

Author_Institution

Graduate Sch. of Eng. Sci., Osaka Univ., Japan

fYear

2000

fDate

12-12 May 2000

Firstpage

57

Lastpage

58

Abstract

Summary form only given. Recent development of micro-photoluminescence (/spl mu/-PL) spectroscopy has enabled us to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. We report on the /spl mu/-PL spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. We have observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; photoluminescence; semiconductor heterojunctions; semiconductor quantum dots; spectral line intensity; substrates; (411)A GaAs surface; (411)A surface; GaAs substrate; GaAs-AlGaAs; GaAs/AlGaAs quantum dots; confined exciton; excitation power density; excited states; long coherence time; lowest state; micro-photoluminescence; micro-photoluminescence spectroscopy; photoluminescence; sharp homogeneous linewidth; sharp luminescence lines; single quantum dot; single quantum dots; Excitons; Gallium arsenide; Laser excitation; Optical pulses; Optical surface waves; Photoluminescence; Pulse measurements; Quantum dot lasers; Quantum dots; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest

Conference_Location

San Francisco, CA, USA

ISSN

1094-5695

Print_ISBN

1-55752-608-7

Type

conf

Filename

901612