Title :
Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface
Author :
Watatani, C. ; Edamatsu, K. ; Itoh, T. ; Hayashi, H. ; Shimomura, S. ; Hiyamizu, S.
Author_Institution :
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
Abstract :
Summary form only given. Recent development of micro-photoluminescence (/spl mu/-PL) spectroscopy has enabled us to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. We report on the /spl mu/-PL spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. We have observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; photoluminescence; semiconductor heterojunctions; semiconductor quantum dots; spectral line intensity; substrates; (411)A GaAs surface; (411)A surface; GaAs substrate; GaAs-AlGaAs; GaAs/AlGaAs quantum dots; confined exciton; excitation power density; excited states; long coherence time; lowest state; micro-photoluminescence; micro-photoluminescence spectroscopy; photoluminescence; sharp homogeneous linewidth; sharp luminescence lines; single quantum dot; single quantum dots; Excitons; Gallium arsenide; Laser excitation; Optical pulses; Optical surface waves; Photoluminescence; Pulse measurements; Quantum dot lasers; Quantum dots; US Department of Transportation;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7
